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Press Releases

Adesto Technologies Wins DARPA Award to Develop Sub-Threshold Non-Volatile, Embedded CBRAM Memory

Monday, November 29, 2010

Monday, November 29, 2010

Adesto plans to demonstrate Working Silicon Operating Down to 0.6V

(Sunnyvale, California. BUSINESS WIRE ) – Adesto Technologies, the leading developer of Conductive Bridging RAM (CBRAM™), a low power and low cost CMOS non-volatile memory, is announcing that it has received an award from DARPA to develop and ...

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