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Adesto Lowers CBRAM Voltage In Pursuit of IoT

Monday, November 10, 2014

Electronics360, November 10, 2014 — Fabless startup Adesto Technologies Corp. (Sunnyvale, Calif.) is developing a 1.2V-version of its conductive bridging RAM (CBRAM) non-volatile memory which it hopes will find favor with developers of wireless sensor nodes and wearable electronic systems.

CBRAM technology was originally developed at Arizona State University where it was also known as Programmable Metallization Cell technology. It involves the movement of metallic ions to form and break a conductive bridging filament. While early research focused on silver ion migration, Adesto memories are based on the movement of copper ions…

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