Speed and power consumption matter, especially in modern edge computing and AI applications that make up the Internet of Things (IoT). Standard, off the-shelf memory products can’t satisfy these requirements. What’s needed is a breakthrough memory technology that can meet the requirements of the billions of battery-operated devices communicating on the edge of the Internet.
Since 2007, Adesto has led the way in developing resistive RAM technology, and we are recognized in the industry for our strong patent portfolio. We have grown our Conductive Bridging RAM (CBRAM) resistive memory technology from atoms to circuits to products. Our know-how includes a fundamental understanding of the physics, materials and designs required to productize resistive memory, and extensive experience with the ecosystem; from raw materials to finished device manufacturing.
Resistive RAM, in particular Adesto’s CBRAM, offers significant advantages over other non-volatile memory technologies:
Adesto’s CBRAM technology is a breakthrough non-volatile ReRAM memory technology. It consumes significantly less energy than today’s leading memories without sacrificing performance or reliability. This discrete non-volatile memory (NVM) technology can achieve 50-100x lower power in read/write operations compared to competitive solutions.
With CBRAM, designers can extend the battery life of their systems and/or use smaller batteries, or even design systems for battery-free operation through energy harvesting. Since CBRAM can withstand medical sterilization processes, it’s also ideal for smart medical devices.
A notable advantage of CBRAM is that the write operation in its bit-cells is very fast (<1us) compared to standard flash memory technologies (~1ms), and it also does not require a bit to be pre-erased. This makes write operations on CBRAM products 20 times faster than standard flash, while consuming 10 to 100 times less energy.
CBRAM is used in a multitude of applications with demanding environments and conditions. Unlike other non-volatile memory technologies, CBRAM provides a robust solution and is well suited for harsh environments.
|Gamma||200kGy (20M rad)||Passed|
|e-beam||200kGy (20M rad)||Passed|
|Heavy Ion||75 MeV·cm2/mg||Passed|
|High Temp (SMT)||10min @ 260ºC||Passed|
|Magnetic fields||~103 Gauss||Passed|
|UV light||30min @ 12mW/cm2||Passed|
Adesto’s CBRAM memory is created by applying fab-friendly, patented metallization and dielectric stack layers between standard CMOS interconnect metal layers. The result is a superior NVM technology that’s easy to embed into standard logic flows.
CBRAM technology relies on the electrochemical making and breaking of a conductive link. This process changes the resistance of the CBRAM storage element which is used to represent data. The conductive link is robust and can withstand high thermal stresses.
Adesto is the recognized leader in the commercialization of resistive memories and in forging licensing agreements with SoC partners in the semiconductor industry. Foundries, IDMs or fabless companies looking for low-power embedded NVM solutions should contact us directly to explore partnership opportunities.
We were the first company to successfully commercialize a ReRAM technology. Commercial products taking advantage of Adesto’s proven CBRAM ReRAM technology are in production today. From medical devices to satellites, CBRAM benefits include the ability to survive in harsh environments. Consumer and energy harvesting applications are taking advantage of CBRAM’s power and performance.