Extremely Low Power. Extremely Fast.
Offering fast access and extremely low power, our EEPROMs outperform competitive devices. With no pre-erase cycle required, the write cycle time is up to 100x faster and consumes up to 100x less power. This makes them perfect for battery operated and energy harvesting applications such as camera modules, medical devices, small wearables, and smart tags.
CBRAM is a resistive RAM technology that provides power, speed, and cost benefits over other non-volatile memory technologies. Our EEPROM devices take advantage of CBRAM technology to deliver extremely low power and faster performance than competitive devices.
Moneta
RM33 – SPI, voltages: Core, I/O
RM30 – SPI, voltages: Core, I/O, Write
Mavriq
RM24C – I2C, wide Vcc
RM25C – Single SPI, wide Vcc
Mavriq CM
RM24C – I2C, wide Vcc, 4ball WLCSP
RM3000/RM3300 Series: Moneta Ultra Low Power Memory (Product Overview)
300kB • August 2016
Article: Adesto Targets IoT Using CBRAM
800KB • February 2016
CBRAM – Speed, Voltage and Energy Advantages over Floating Gate Technologies
395 KB • April 2017
PCB Design and Layout Considerations for Adesto Memory Devices
314 KB • March 2018
Article: Adesto Targets IoT Using CBRAM
800KB • February 2016
RM3000/RM3300 Series: Moneta Ultra Low Power Memory (Product Overview)
300kB • August 2016
Article: Adesto Targets IoT Using CBRAM
800KB • February 2016
CBRAM – Speed, Voltage and Energy Advantages over Floating Gate Technologies
395 KB • April 2017
PCB Design and Layout Considerations for Adesto Memory Devices
314 KB • March 2018
Article: Adesto Targets IoT Using CBRAM
800KB • February 2016
RM3000/RM3300 Series: Moneta Ultra Low Power Memory (Product Overview)
300kB • August 2016
Article: Adesto Targets IoT Using CBRAM
800KB • February 2016
CBRAM – Speed, Voltage and Energy Advantages over Floating Gate Technologies
395 KB • April 2017
PCB Design and Layout Considerations for Adesto Memory Devices
314 KB • March 2018
Article: Adesto Targets IoT Using CBRAM
800KB • February 2016